PXTA14,115
- Mfr.Part #
- PXTA14,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A SOT89
- Stock
- 167,373
- In Stock :
- 167,373
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Power Dissipation :
- 1.3W
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 125MHz
- JESD-30 Code :
- R-PSSO-F3
- hFE Min :
- 10000
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1.3W
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 10V
- Base Part Number :
- PXTA14
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Pins :
- 4
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 125MHz
- Transistor Type :
- NPN - Darlington
- Datasheets
- PXTA14,115
PXTA14,115 Documents
SOT89.jpg)
NPN - Darlington 150°C TJ 100nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
PXTA14,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
PXTA14,115 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PXTA14,115 Applications
There are a lot of Nexperia USA Inc.
PXTA14,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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