PXTA14,115
- Mfr.Part #
- PXTA14,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A SOT89
- Stock
- 167,373
- In Stock :
- 167,373
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Max Breakdown Voltage :
- 30V
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-F3
- Continuous Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Polarity :
- NPN
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- NPN - Darlington
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Transition Frequency :
- 125MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 125MHz
- Emitter Base Voltage (VEBO) :
- 10V
- Base Part Number :
- PXTA14
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.3W
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Power Dissipation :
- 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- hFE Min :
- 10000
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Datasheets
- PXTA14,115
SOT89.jpg)
NPN - Darlington 150°C TJ 100nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
PXTA14,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
PXTA14,115 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PXTA14,115 Applications
There are a lot of Nexperia USA Inc.
PXTA14,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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