PXTA14,115
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- Mfr.Part #
- PXTA14,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 500MA SOT89
- Stock
- 167,373
- In Stock ：
- 167,373
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- hFE Min :
- 10000
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Frequency - Transition :
- 125MHz
- Transition Frequency :
- 125MHz
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Polarity :
- NPN
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Published :
- 2009
- Base Part Number :
- PXTA14
- Power Dissipation :
- 1.3W
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 10V
- Max Power Dissipation :
- 1.3W
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 1.5V
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Continuous Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Datasheets
- PXTA14,115
SOT89.jpg)
NPN - Darlington 150°C TJ 100nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
PXTA14,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
PXTA14,115 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PXTA14,115 Applications
There are a lot of Nexperia USA Inc.
PXTA14,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PXTA14,115 | NXP Semiconductors | 167,373 | TRANS NPN DARL 30V 0.5A SOT89 |
| PXTA42,115 | NXP Semiconductors | 53,593 | TRANS NPN 300V 0.1A SOT89 |
| PXTA92,115 | NXP Semiconductors | 131,793 | TRANS PNP 300V 0.1A SOT89 |
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