PUMH15,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

4.7k Ω

Current - Collector Cutoff (Max) :

1μA

Voltage - Collector Emitter Breakdown (Max) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Published :

2011

Resistor - Emitter Base (R2) :

4.7k Ω

Mounting Type :

Surface Mount

Number of Terminations :

6

Number of Elements :

2

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G6

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector (Ic) (Max) :

100mA

Power - Max :

300mW

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

Terminal Form :

Gull wing