PUMB9,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Max Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Published :

2011

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

47k Ω

JESD-609 Code :

e3

Lead Free :

Lead Free

Resistor - Base (R1) :

10k Ω

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Base Part Number :

MB9

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 4.7

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Number of Terminations :

6

Pin Count :

6

Element Configuration :

Dual

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1μA

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Elements :

2

Terminal Form :

Gull wing

Max Collector Current :

100mA

Radiation Hardening :

No