PUMB24,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

20mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Terminal Form :

Gull wing

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

100k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Voltage - Collector Emitter Breakdown (Max) :

50V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Power - Max :

300mW

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Pin Count :

6

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Base Part Number :

MB24

Number of Elements :

2

Number of Terminations :

6

Resistor - Base (R1) :

100k Ω

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 PNP - Pre-Biased (Dual)

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

1μA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Operating Temperature (Max) :

150°C