PUMB15,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

4.7k Ω

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Power - Max :

300mW

Current - Collector Cutoff (Max) :

1μA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Resistor - Emitter Base (R2) :

4.7k Ω

Current - Collector (Ic) (Max) :

100mA

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Surface Mount :

yes

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

50V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V

Number of Terminations :

6

Number of Elements :

2

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)