PQMD12Z

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

47k Ω

RoHS Status :

ROHS3 Compliant

Transition Frequency :

230MHz

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

350mW

Min Operating Temperature :

-55°C

Number of Terminations :

6

Pin Count :

6

Continuous Collector Current :

100mA

Published :

2015

Case Connection :

COLLECTOR

Gain Bandwidth Product :

230MHz

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

10V

Max Breakdown Voltage :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Collector Base Voltage (VCBO) :

50V

Package / Case :

6-XFDFN Exposed Pad

Resistor - Emitter Base (R2) :

47k Ω

Frequency - Transition :

230MHz 180MHz

Mounting Type :

Surface Mount

hFE Min :

80

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Number of Pins :

6

Radiation Hardening :

No

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Number of Elements :

2

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Factory Lead Time :

4 Weeks