PN200A_D26Z
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- Mfr.Part #
- PN200A_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A TO92-3
- Stock
- 13,343
- In Stock ：
- 13,343
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 250MHz
- Power - Max :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 50nA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Mounting Type :
- Through Hole
- Base Part Number :
- PN200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 500mA
- Datasheets
- PN200A_D26Z
PNP -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN200A_D26Z Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 20mA, 200mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 45V.
PN200A_D26Z Features
the DC current gain for this device is 300 @ 10mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the supplier device package of TO-92-3
PN200A_D26Z Applications
There are a lot of ON Semiconductor
PN200A_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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