PN200A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Gain Bandwidth Product :

250MHz

Max Collector Current :

500mA

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e3

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Collector Emitter Saturation Voltage :

-400mV

Frequency :

250MHz

Base Part Number :

PN200

Transistor Type :

PNP

Height :

5.33mm

Number of Elements :

1

Collector Emitter Breakdown Voltage :

45V

Current Rating :

-500mA

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

625mW

Published :

2017

Factory Lead Time :

7 Weeks

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Weight :

201mg

Polarity/Channel Type :

PNP

Max Power Dissipation :

625mW

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 1V

hFE Min :

300

Width :

4.19mm

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50nA

Length :

5.2mm

Transition Frequency :

250MHz

Emitter Base Voltage (VEBO) :

-6V

Voltage - Rated DC :

-45V

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

-60V

Collector Emitter Voltage (VCEO) :

45V

ECCN Code :

EAR99

Number of Pins :

3