PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A SOT323
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- Turn Off Time-Max (toff) :
- 700ns
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 150MHz
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Base Part Number :
- PMSS3906
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector-Base Capacitance-Max :
- 4.5pF
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Max Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- VCEsat-Max :
- 0.4 V
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- PMSS3906,115
PMSS3906,115 Documents
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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