PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.1A SOT323
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 150MHz
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Turn Off Time-Max (toff) :
- 700ns
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Base Part Number :
- PMSS3906
- Power Dissipation :
- 200mW
- VCEsat-Max :
- 0.4 V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Collector-Base Capacitance-Max :
- 4.5pF
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- Published :
- 2009
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Frequency :
- 150MHz
- Datasheets
- PMSS3906,115
PMSS3906,115 Documents
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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