PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSS3906 - SMALL SIGNAL
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 700ns
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 40V
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- PMSS3906
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200mW
- VCEsat-Max :
- 0.4 V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 4.5pF
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PMSS3906,115
PMSS3906,115 Documents
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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