PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSS3906 - SMALL SIGNAL
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 700ns
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Collector-Base Capacitance-Max :
- 4.5pF
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- PMSS3906
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- VCEsat-Max :
- 0.4 V
- Datasheets
- PMSS3906,115
PMSS3906,115 Documents
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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