PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSS3906 - SMALL SIGNAL
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- VCEsat-Max :
- 0.4 V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Turn Off Time-Max (toff) :
- 700ns
- Pin Count :
- 3
- Collector-Base Capacitance-Max :
- 4.5pF
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Base Part Number :
- PMSS3906
- Transition Frequency :
- 150MHz
- Published :
- 2009
- Max Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Datasheets
- PMSS3906,115
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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