PMSS3906,115
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- Mfr.Part #
- PMSS3906,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA PMSS3906 - SMALL SIGNAL
- Stock
- 17,582
- In Stock ：
- 17,582
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Max Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 150MHz
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 700ns
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 40V
- ECCN Code :
- EAR99
- Base Part Number :
- PMSS3906
- Factory Lead Time :
- 4 Weeks
- Collector-Base Capacitance-Max :
- 4.5pF
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- VCEsat-Max :
- 0.4 V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- PMSS3906,115
PMSS3906,115 Documents
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PMSS3906,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc.
PMSS3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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