PMP4201G135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Surface Mount

Power - Max :

300mW

Max Breakdown Voltage :

45V

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

250MHz

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

250MHz

Transistor Type :

2 NPN (Dual) Matched Pair, Common Emitter

Element Configuration :

Dual

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Terminations :

5

Operating Temperature :

150°C TJ

Factory Lead Time :

6 Weeks

Terminal Form :

Gull wing

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Number of Pins :

5

Max Collector Current :

100mA

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

45V

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Number of Elements :

2

Base Part Number :

PMP4201

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

50V

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

45V

Published :

2009

Pin Count :

5

JESD-609 Code :

e3