PMP4201G,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

50V

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Max Breakdown Voltage :

45V

Transition Frequency :

250MHz

Pin Count :

5

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

5

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

15nA ICBO

Factory Lead Time :

6 Weeks

Transistor Application :

AMPLIFIER

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Power Dissipation :

300mW

Case Connection :

Isolated

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Frequency :

250MHz

Published :

2009

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Gain Bandwidth Product :

250MHz

Max Collector Current :

100mA

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Base Part Number :

PMP4201

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN (Dual) Matched Pair, Common Emitter

Terminal Form :

Gull wing

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Element Configuration :

Dual