PMN48XP,125

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Surface Mount :

yes

Fall Time (Typ) :

22 ns

Continuous Drain Current (ID) :

4.1A

Max Dual Supply Voltage :

-20V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Pin Count :

6

Drain-source On Resistance-Max :

0.055Ohm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Factory Lead Time :

4 Weeks

Drain to Source Voltage (Vdss) :

20V

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Rise Time :

22ns

Radiation Hardening :

No

Turn-Off Delay Time :

51 ns

Power Dissipation-Max :

530mW Ta 6.25W Tc

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Vgs (Max) :

±12V

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Package / Case :

SC-74, SOT-457

Number of Elements :

1