PMN40UPE,115
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- Mfr.Part #
- PMN40UPE,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.7A 6TSOP
- Stock
- 16,090
- In Stock ：
- 16,090
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±8V
- Pin Count :
- 6
- Continuous Drain Current (ID) :
- 4.7A
- Power Dissipation-Max :
- 500mW Ta 8.33W Tc
- Number of Pins :
- 6
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Turn-Off Delay Time :
- 50 ns
- Gate to Source Voltage (Vgs) :
- -700mV
- Fall Time (Typ) :
- 34 ns
- Package / Case :
- SC-74, SOT-457
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 10V
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 4.5V
- Drain to Source Breakdown Voltage :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 3A, 4.5V
- Max Dual Supply Voltage :
- -20V
- FET Type :
- P-Channel
- Rise Time :
- 21ns
- Turn On Delay Time :
- 8 ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Datasheets
- PMN40UPE,115
P-Channel Tape & Reel (TR) 43m Ω @ 3A, 4.5V ±8V 1820pF @ 10V 23nC @ 4.5V 20V SC-74, SOT-457
PMN40UPE,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1820pF @ 10V.This device conducts a continuous drain current (ID) of 4.7A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be -700mV.With -20V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
PMN40UPE,115 Features
a continuous drain current (ID) of 4.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a 20V drain to source voltage (Vdss)
PMN40UPE,115 Applications
There are a lot of Nexperia USA Inc.
PMN40UPE,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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