PMN40LN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.038Ohm

JESD-30 Code :

R-PDSO-G6

Package / Case :

SC-74, SOT-457

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.75W Tc

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 25V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

2001

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Pin Count :

6

Rds On (Max) @ Id, Vgs :

38m Ω @ 2.5A, 10V

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchMOS™

Vgs (Max) :

±15V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-609 Code :

e3

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5.4A

Terminal Form :

Gull wing