PMN40LN,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.038Ohm

Gate Charge (Qg) (Max) @ Vgs :

13.8nC @ 10V

JESD-30 Code :

R-PDSO-G6

HTS Code :

8541.29.00.75

Published :

2001

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.75W Tc

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

5.4A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SC-74, SOT-457

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 25V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Number of Terminations :

6

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

38m Ω @ 2.5A, 10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs (Max) :

±15V