PMN28UN,135
- Mfr.Part #
- PMN28UN,135
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 5.7A 6TSOP
- Stock
- 35,728
- In Stock :
- 35,728
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8 ns
- Turn-Off Delay Time :
- 53 ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 12V
- Fall Time (Typ) :
- 15 ns
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Tc
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Weight :
- 4.535924g
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.7mm
- Package / Case :
- SC-74, SOT-457
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 5.7A
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- Gate Charge (Qg) (Max) @ Vgs :
- 10.1nC @ 4.5V
- Threshold Voltage :
- 700mV
- HTS Code :
- 8541.29.00.75
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 700mV @ 1mA
- Number of Pins :
- 6
- Power Dissipation :
- 1.75W
- Power Dissipation-Max :
- 1.75W Tc
- Vgs (Max) :
- ±8V
- Series :
- TrenchMOS™
- Pin Count :
- 6
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 8V
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 12V
- Drain-source On Resistance-Max :
- 0.04Ohm
- Lead Free :
- Lead Free
- Length :
- 3.1mm
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 2A, 4.5V
- Packaging :
- Tape and Reel (TR)
- Height :
- 1mm
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 1997
- Input Capacitance (Ciss) (Max) @ Vds :
- 740pF @ 10V
- Datasheets
- PMN28UN,135

N-Channel Tape & Reel (TR) 34m Ω @ 2A, 4.5V ±8V 740pF @ 10V 10.1nC @ 4.5V SC-74, SOT-457
PMN28UN,135 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 740pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 12V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 12V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The maximum dual supply voltage can be supported by 12V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 700mV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
PMN28UN,135 Features
a continuous drain current (ID) of 5.7A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 53 ns
a threshold voltage of 700mV
PMN28UN,135 Applications
There are a lot of Nexperia USA Inc.
PMN28UN,135 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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