PMN25UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

6A

Package / Case :

SC-74, SOT-457

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Drain-source On Resistance-Max :

0.027Ohm

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Source Url Status Check Date :

2013-06-14 00:00:00

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

530mW Ta 6.25W Tc

Vgs (Max) :

±8V

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G6

FET Type :

N-Channel

Number of Terminations :

6

Pin Count :

6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Position :

Dual

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 4.5V

Reference Standard :

IEC-60134

Published :

2013