PMN23UN,165

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

28m Ω @ 2A, 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

700mV @ 1mA

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

20V

Terminal Position :

Dual

Power Dissipation-Max :

1.75W Tc

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

HTS Code :

8541.29.00.75

Qualification Status :

Not Qualified

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

JESD-609 Code :

e3

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 4.5V

Package / Case :

SC-74, SOT-457

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0344Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

25.2A

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Pin Count :

6

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±8V

Additional Feature :

FAST SWITCHING, LOW THRESHOLD

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 10V

Drain Current-Max (Abs) (ID) :

6.3A

RoHS Status :

ROHS3 Compliant