PMN23UN,165

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

25.2A

Rds On (Max) @ Id, Vgs :

28m Ω @ 2A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 4.5V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.75W Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

6.3A

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 10V

Additional Feature :

FAST SWITCHING, LOW THRESHOLD

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0344Ohm

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Pin Count :

6

Published :

1997

Vgs(th) (Max) @ Id :

700mV @ 1mA

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Number of Terminations :

6

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

TrenchMOS™

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

DS Breakdown Voltage-Min :

20V