PMK35EP,518

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Position :

Dual

Power Dissipation-Max :

6.9W Tc

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

14.9A Tc

Published :

2010

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

260mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

JESD-609 Code :

e4

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Gate to Source Voltage (Vgs) :

25V

Max Dual Supply Voltage :

-30V

Rise Time :

9ns

Turn On Delay Time :

9 ns

JEDEC-95 Code :

MS-012AA

Fall Time (Typ) :

24 ns

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

8

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Series :

TrenchMOS™

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

RoHS Status :

RoHS Compliant

Number of Pins :

8

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.019Ohm

Turn-Off Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

Drain Current-Max (Abs) (ID) :

14.9A

Rds On (Max) @ Id, Vgs :

19m Ω @ 9.2A, 10V

Number of Elements :

1

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V