PMK30EP518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

6.9W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

8ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

14.9A Tc

JESD-609 Code :

e4

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

Turn On Delay Time :

10 ns

Published :

2010

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Pin Count :

8

Surface Mount :

yes

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2240pF @ 25V

Max Dual Supply Voltage :

-30V

Number of Terminations :

8

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

14.9A

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Number of Elements :

1

Drain-source On Resistance-Max :

0.019Ohm

Fall Time (Typ) :

21 ns

JEDEC-95 Code :

MS-012AA

Turn-Off Delay Time :

56 ns

Rds On (Max) @ Id, Vgs :

19m Ω @ 9.2A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8