PMK30EP,518
- Mfr.Part #
- PMK30EP,518
- Manufacturer
- Nexperia
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 14.9A 8SO
- Stock
- 67,206
- In Stock :
- 67,206
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 6.9W Tc
- Continuous Drain Current (ID) :
- 14.9A
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.019Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 14.9A Tc
- Drain to Source Voltage (Vdss) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 9.2A, 10V
- FET Type :
- P-Channel
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Max Dual Supply Voltage :
- -30V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2240pF @ 25V
- Series :
- TrenchMOS™
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 56 ns
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Turn On Delay Time :
- 10 ns
- JEDEC-95 Code :
- MS-012AA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e4
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 21 ns
- Terminal Form :
- Gull wing
- Pin Count :
- 8
- Surface Mount :
- yes
- Published :
- 2010
- Rise Time :
- 8ns
- Datasheets
- PMK30EP,518

P-Channel Tape & Reel (TR) 19m Ω @ 9.2A, 10V ±20V 2240pF @ 25V 50nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
PMK30EP,518 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2240pF @ 25V.This device conducts a continuous drain current (ID) of 14.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 56 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -30V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
PMK30EP,518 Features
a continuous drain current (ID) of 14.9A
the turn-off delay time is 56 ns
a 30V drain to source voltage (Vdss)
PMK30EP,518 Applications
There are a lot of Nexperia USA Inc.
PMK30EP,518 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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