PMG85XPH

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

115m Ω @ 2A, 4.5V

Rise Time :

35ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Power Dissipation-Max :

375mW Ta 2.4W Tc

Terminal Form :

Gull wing

Turn On Delay Time :

13 ns

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 4.5V

DS Breakdown Voltage-Min :

20V

Drain Current-Max (Abs) (ID) :

2A

Power Dissipation :

725mW

Transistor Element Material :

SILICON

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Type :

P-Channel

Turn-Off Delay Time :

39 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2A Tj

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

6

Fall Time (Typ) :

25 ns

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

12V

Pin Count :

6

Mounting Type :

Surface Mount