PMG85XPH

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 10V

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 4.5V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Mounting Type :

Surface Mount

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Number of Pins :

6

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2A Tj

FET Type :

P-Channel

DS Breakdown Voltage-Min :

20V

Turn-Off Delay Time :

39 ns

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

115m Ω @ 2A, 4.5V

Published :

2011

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Package / Case :

6-TSSOP, SC-88, SOT-363

Vgs (Max) :

±12V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

375mW Ta 2.4W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2A

Drain Current-Max (Abs) (ID) :

2A

Fall Time (Typ) :

25 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

725mW

Terminal Form :

Gull wing