PMG85XP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 10V

Rise Time :

35ns

Continuous Drain Current (ID) :

2A

Power Dissipation-Max :

375mW Ta 2.4W Tc

Resistance :

115mOhm

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Pin Count :

6

Turn On Delay Time :

13 ns

Power Dissipation :

375mW

Rds On (Max) @ Id, Vgs :

115m Ω @ 2A, 4.5V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2A Tj

Lead Free :

Lead Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Max Dual Supply Voltage :

-20V

Fall Time (Typ) :

25 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 4.5V

Published :

2011

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Turn-Off Delay Time :

39 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6