PMDXB950UPELZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V

FET Feature :

Standard

Drain Current-Max (Abs) (ID) :

0.5A

Operating Mode :

ENHANCEMENT MODE

Power - Max :

380mW

JESD-30 Code :

R-PDSO-N6

Number of Terminations :

6

Case Connection :

DRAIN

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

6-XFDFN Exposed Pad

Reference Standard :

IEC-60134

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

950mV @ 250μA

Max Power Dissipation :

380mW

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Number of Elements :

2

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

500mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

4 Weeks

Pin Count :

6

Mount :

Surface Mount