PMDXB950UPELZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2016

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

DS Breakdown Voltage-Min :

20V

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Package / Case :

6-XFDFN Exposed Pad

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 500mA, 4.5V

FET Feature :

Standard

Reference Standard :

IEC-60134

Terminal Form :

NO LEAD

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

500mA

Drain Current-Max (Abs) (ID) :

0.5A

Power - Max :

380mW

Max Power Dissipation :

380mW

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-N6