PMDXB550UNEZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Pin Count :

6

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

590mA

Reference Standard :

IEC-60134

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

670m Ω @ 590mA, 4.5V

Package / Case :

6-XFDFN Exposed Pad

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Standard

Vgs(th) (Max) @ Id :

950mV @ 250μA

Number of Terminations :

6

Max Power Dissipation :

285mW

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

30.3pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-N6

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.59A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

1.05nC @ 4.5V

Factory Lead Time :

4 Weeks

Power - Max :

285mW

Terminal Form :

NO LEAD

Number of Elements :

2

Drain-source On Resistance-Max :

0.9Ohm

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Mount :

Surface Mount