PMBTA44,215
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- Mfr.Part #
- PMBTA44,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A TO236AB
- Stock
- 15,017
- In Stock ：
- 15,017
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 400V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 20MHz
- Max Collector Current :
- 300mA
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 20MHz
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 20MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- hFE Min :
- 40
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Voltage :
- 400V
- Current :
- 3A
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Base Part Number :
- PMBTA44
- Collector Emitter Breakdown Voltage :
- 400V
- Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Datasheets
- PMBTA44,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBTA44,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 20MHz.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 300mA volts.
PMBTA44,215 Features
the DC current gain for this device is 50 @ 10mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
PMBTA44,215 Applications
There are a lot of Nexperia USA Inc.
PMBTA44,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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