PMBT2222,235

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Collector-Base Capacitance-Max :

8pF

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

30V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

600mA

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

30V

Gain Bandwidth Product :

250MHz

JESD-609 Code :

e3

Frequency :

250MHz

Number of Terminations :

3

Base Part Number :

PMBT2222

Max Power Dissipation :

250mW

Additional Feature :

HIGH CURRENT DRIVER

Mount :

Surface Mount

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

Turn Off Time-Max (toff) :

250ns

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

10nA ICBO

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

250MHz

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2010

Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Number of Pins :

3

Terminal Form :

Gull wing

Pin Count :

3

ECCN Code :

EAR99