PMBTA42DS,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Power - Max :

420mW

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

300V

Package / Case :

SC-74, SOT-457

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

500mV

Pin Count :

6

Polarity :

NPN

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Published :

2009

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transition Frequency :

50MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Factory Lead Time :

4 Weeks

Number of Elements :

2

Power Dissipation :

700mW

Transistor Type :

2 NPN (Dual)

Transistor Element Material :

SILICON

Max Breakdown Voltage :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

50MHz

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

300V

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

Max Power Dissipation :

700mW

Collector Base Voltage (VCBO) :

300V

Base Part Number :

PMBTA42DS

Gain Bandwidth Product :

50MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Mount :

Surface Mount