PMBTA42DS,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Max Power Dissipation :

700mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Collector Base Voltage (VCBO) :

300V

Gain Bandwidth Product :

50MHz

Element Configuration :

Dual

Base Part Number :

PMBTA42DS

Terminal Form :

Gull wing

Max Collector Current :

100mA

Number of Pins :

6

Power - Max :

420mW

Number of Terminations :

6

Transistor Type :

2 NPN (Dual)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

300V

Package / Case :

SC-74, SOT-457

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

6V

Max Breakdown Voltage :

300V

Number of Elements :

2

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300V

Frequency :

50MHz

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Pin Count :

6

Mount :

Surface Mount

Published :

2009

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Transition Frequency :

50MHz

Collector Emitter Saturation Voltage :

500mV

JESD-609 Code :

e3

Power Dissipation :

700mW