PMBTA06,235
- Mfr.Part #
- PMBTA06,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO236AB
- Stock
- 4,334
- In Stock :
- 4,334
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Base Part Number :
- PMBTA06
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Published :
- 2009
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Max Breakdown Voltage :
- 80V
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 100MHz
- Datasheets
- PMBTA06,235
PMBTA06,235 Documents

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBTA06,235 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
PMBTA06,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
PMBTA06,235 Applications
There are a lot of Nexperia USA Inc.
PMBTA06,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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