PMBT5550,235
- Mfr.Part #
- PMBT5550,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.3A TO236AB
- Stock
- 41,279
- In Stock :
- 41,279
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Collector-Base Capacitance-Max :
- 6pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- VCEsat-Max :
- 0.25 V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 140V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Base Part Number :
- PMBT5550
- Pin Count :
- 3
- Frequency :
- 300MHz
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- Collector Base Voltage (VCBO) :
- 160V
- Datasheets
- PMBT5550,235

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT5550,235 Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 300mA volts.
PMBT5550,235 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMBT5550,235 Applications
There are a lot of Nexperia USA Inc.
PMBT5550,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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