PMBT5550,215
- Mfr.Part #
- PMBT5550,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.3A TO236AB
- Stock
- 46,460
- In Stock :
- 46,460
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Frequency - Transition :
- 300MHz
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Transistor Type :
- NPN
- Base Part Number :
- PMBT5550
- Collector-Base Capacitance-Max :
- 6pF
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-30 Code :
- R-PDSO-G3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 300mA
- Terminal Finish :
- Tin (Sn)
- Power - Max :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 2
- Published :
- 2009
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Datasheets
- PMBT5550,215

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT5550,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 50mA.Parts of this part have transition frequencies of 100MHz.This device displays a 140V maximum voltage - Collector Emitter Breakdown.
PMBT5550,215 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
PMBT5550,215 Applications
There are a lot of Nexperia USA Inc.
PMBT5550,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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