PMBT2907,215
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- Mfr.Part #
- PMBT2907,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A TO236AB
- Stock
- 252,047
- In Stock ：
- 252,047
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Polarity :
- NPN, PNP
- Max Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PMBT2907
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Turn On Time-Max (ton) :
- 40ns
- Collector Emitter Voltage (VCEO) :
- 40V
- Series :
- Automotive, AEC-Q101
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2009
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 200MHz
- Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 200MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Frequency :
- 200MHz
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Datasheets
- PMBT2907,215
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT2907,215 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
PMBT2907,215 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
PMBT2907,215 Applications
There are a lot of Nexperia USA Inc.
PMBT2907,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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