PMBS3906,235
- Mfr.Part #
- PMBS3906,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PMBS3906 - SMALL SI
- Stock
- 205,104
- In Stock :
- 205,104
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 700ns
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PMBS3906
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transition Frequency :
- 150MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Max Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Datasheets
- PMBS3906,235

PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBS3906,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 100mA volts can be achieved.
PMBS3906,235 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMBS3906,235 Applications
There are a lot of Nexperia USA Inc.
PMBS3906,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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