PMBS3906,235
- Mfr.Part #
- PMBS3906,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PMBS3906 - SMALL SI
- Stock
- 205,104
- In Stock :
- 205,104
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- Frequency :
- 150MHz
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Base Part Number :
- PMBS3906
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Turn Off Time-Max (toff) :
- 700ns
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- PMBS3906,235
PMBS3906,235 Documents

PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBS3906,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.A maximum collector current of 100mA volts can be achieved.
PMBS3906,235 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PMBS3906,235 Applications
There are a lot of Nexperia USA Inc.
PMBS3906,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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