PMBS3904,235
- Mfr.Part #
- PMBS3904,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 100MA SOT23
- Stock
- 213,442
- In Stock :
- 213,442
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 180MHz
- Number of Elements :
- 1
- Frequency :
- 180MHz
- Max Power Dissipation :
- 250mW
- Published :
- 2009
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- PMBS3904
- Terminal Position :
- Dual
- Transition Frequency :
- 180MHz
- Mount :
- Surface Mount
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Datasheets
- PMBS3904,235

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBS3904,235 Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 100mA volts is possible.
PMBS3904,235 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
PMBS3904,235 Applications
There are a lot of Nexperia USA Inc.
PMBS3904,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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