PMBFJ175,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Voltage - Cutoff (VGS off) @ Id :

3V @ 10nA

Current - Drain (Idss) @ Vds (Vgs=0) :

7mA @ 15V

DS Breakdown Voltage-Min :

30V

Base Part Number :

MBFJ175

Number of Elements :

1

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

FET Technology :

JUNCTION

Terminal Form :

Gull wing

Terminal Position :

Dual

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

8pF @ 10V VGS

Resistance - RDS(On) :

125Ohm

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Published :

1997

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Number of Terminations :

3

Operating Temperature :

150°C TJ

Pin Count :

3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Voltage - Breakdown (V(BR)GSS) :

30V

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

Tin (Sn)

Power Dissipation-Max (Abs) :

0.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Operating Mode :

Depletion Mode

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300mW

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain-source On Resistance-Max :

125Ohm