PMBF170,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

JEDEC-95 Code :

TO-236AB

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

10 pF

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Power Dissipation-Max :

830mW Tc

Reference Standard :

IEC-60134

Drain-source On Resistance-Max :

5Ohm

Operating Temperature :

-65°C~150°C TJ

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.3A

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Surface Mount :

yes

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 1mA

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Factory Lead Time :

4 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual