PMBF170,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Published :

1997

Continuous Drain Current (ID) :

300mA

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Contact Plating :

Tin

FET Type :

N-Channel

Surface Mount :

yes

Series :

TrenchMOS™

Drain to Source Breakdown Voltage :

60V

Length :

3mm

Power Dissipation-Max :

830mW Tc

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5Ohm

Number of Terminations :

3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Power Dissipation :

830mW

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Element Configuration :

Single

Max Dual Supply Voltage :

60V

Min Breakdown Voltage :

60V

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Height :

1mm

ECCN Code :

EAR99

Nominal Vgs :

2 V

Radiation Hardening :

No

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Width :

1.4mm