PMBF170,215
- Mfr.Part #
- PMBF170,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 300MA TO236AB
- Stock
- 30,041
- In Stock :
- 30,041
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Contact Plating :
- Tin
- Power Dissipation-Max :
- 830mW Tc
- Power Dissipation :
- 830mW
- Continuous Drain Current (ID) :
- 300mA
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Resistance :
- 5Ohm
- Factory Lead Time :
- 4 Weeks
- Max Dual Supply Voltage :
- 60V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Transistor Application :
- SWITCHING
- Published :
- 1997
- Threshold Voltage :
- 2V
- Height :
- 1mm
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Series :
- TrenchMOS™
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Nominal Vgs :
- 2 V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Min Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PMBF170,215
PMBF170,215 Documents

N-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 40pF @ 10V TO-236-3, SC-59, SOT-23-3
PMBF170,215 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 40pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 300mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
PMBF170,215 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2V
PMBF170,215 Applications
There are a lot of Nexperia USA Inc.
PMBF170,215 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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