PMBF170,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Power Dissipation :

830mW

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Continuous Drain Current (ID) :

300mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation-Max :

830mW Tc

Element Configuration :

Single

Height :

1mm

Number of Terminations :

3

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

2 V

Lead Free :

Lead Free

Width :

1.4mm

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Published :

1997

Max Dual Supply Voltage :

60V

Number of Elements :

1

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Breakdown Voltage :

60V

Resistance :

5Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Contact Plating :

Tin

Series :

TrenchMOS™

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 1mA

Length :

3mm

Threshold Voltage :

2V