PHT6NQ10T,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 25V

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Fall Time (Typ) :

15 ns

Surface Mount :

yes

Number of Terminations :

4

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 10V

Pin Count :

4

Power Dissipation :

1.8W

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

26A

Drain-source On Resistance-Max :

0.09Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

20 ns

Number of Elements :

1

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.8W Ta 8.3W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.7mm

Max Dual Supply Voltage :

100V

Vgs (Max) :

±20V

Factory Lead Time :

4 Weeks

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Number of Pins :

4

Length :

6.7mm

Lead Free :

Lead Free

Width :

3.7mm

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

6 ns

Terminal Form :

Gull wing

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Published :

1999

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchMOS™

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No