PHT6N06T,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Additional Feature :

ESD PROTECTED

HTS Code :

8541.29.00.75

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Power Dissipation-Max :

8.3W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.15Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5.5A

Pulsed Drain Current-Max (IDM) :

22A

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 10V

Pin Count :

4

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Avalanche Energy Rating (Eas) :

15 mJ

DS Breakdown Voltage-Min :

55V

ECCN Code :

EAR99

Series :

TrenchMOS™

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Published :

1997

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 25V

Surface Mount :

yes

Package / Case :

TO-261-4, TO-261AA