PHT6N06LT,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 5V

JESD-30 Code :

R-PDSO-G4

Drain-source On Resistance-Max :

0.15Ohm

Published :

1998

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 5V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vgs (Max) :

±13V

Turn Off Time-Max (toff) :

76ns

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

10A

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

HTS Code :

8541.29.00.75

Feedback Cap-Max (Crss) :

50 pF

Drain Current-Max (Abs) (ID) :

2.5A

Power Dissipation-Max :

1.8W Ta 8.3W Tc

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn On Time-Max (ton) :

77ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

FET Type :

N-Channel

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

15 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99