PHP9NQ20T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Rise Time :

19ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

959pF @ 25V

Number of Pins :

3

Series :

TrenchMOS™

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Published :

2010

Turn-Off Delay Time :

25 ns

Drain-source On Resistance-Max :

0.4Ohm

Power Dissipation :

88W

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Fall Time (Typ) :

15 ns

Continuous Drain Current (ID) :

8.7A

Turn On Delay Time :

8 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Drain to Source Breakdown Voltage :

200V

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation-Max :

88W Tc

Factory Lead Time :

20 Weeks

Case Connection :

DRAIN

HTS Code :

8541.29.00.75

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Max Dual Supply Voltage :

200V

Surface Mount :

No

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ