PHP9NQ20T127

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

HTS Code :

8541.29.00.75

Published :

2010

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Rise Time :

19ns

Number of Pins :

3

Continuous Drain Current (ID) :

8.7A

Vgs (Max) :

±30V

Packaging :

Tube

Series :

TrenchMOS™

Radiation Hardening :

No

Power Dissipation :

88W

Number of Terminations :

3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

959pF @ 25V

Case Connection :

DRAIN

ECCN Code :

EAR99

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Max Dual Supply Voltage :

200V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

88W Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Drain-source On Resistance-Max :

0.4Ohm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

20 Weeks

Turn-Off Delay Time :

25 ns

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Surface Mount :

No