PHP96NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.95m Ω @ 25A, 10V

Power Dissipation-Max :

115W Tc

Surface Mount :

No

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

26.7nC @ 5V

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

185 mJ

ECCN Code :

EAR99

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Packaging :

Tube

Series :

TrenchMOS™

Drain Current-Max (Abs) (ID) :

75A

DS Breakdown Voltage-Min :

25V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

240A

Terminal Finish :

Matte Tin (Sn)

Published :

2001

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0075Ohm

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole