PHP55N03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

55A

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

JESD-609 Code :

e3

Published :

1997

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package / Case :

TO-220-3

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

25V

Number of Elements :

1

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

25V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Series :

TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

85W Tc

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

220A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain-source On Resistance-Max :

0.018Ohm

Avalanche Energy Rating (Eas) :

60 mJ

Operating Temperature :

-55°C~175°C TJ