PHP54N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.02Ohm

Vgs (Max) :

±20V

JESD-609 Code :

e3

Packaging :

Tube

FET Type :

N-Channel

ECCN Code :

EAR99

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Package / Case :

TO-220-3

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

115 mJ

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

20m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2009

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

54A Tc

Series :

TrenchMOS™

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

54A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

118W Tc

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

217A

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1592pF @ 25V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING