PHP52N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Terminal Position :

Single

Power Dissipation-Max :

120W Tc

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pulsed Drain Current-Max (IDM) :

208A

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1592pF @ 25V

ECCN Code :

EAR99

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pin Count :

3

Drain Current-Max (Abs) (ID) :

52A

Avalanche Energy Rating (Eas) :

115 mJ

Number of Terminations :

3

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Drain-source On Resistance-Max :

0.022Ohm

Series :

TrenchMOS™

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON