PHP52N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Pin Count :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1592pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Qualification Status :

Not Qualified

Power Dissipation-Max :

120W Tc

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Surface Mount :

No

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

52A

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.022Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

52A Tc

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

208A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2010

Avalanche Energy Rating (Eas) :

115 mJ