PHP193NQ06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Published :

1997

Pin Count :

3

DS Breakdown Voltage-Min :

55V

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

560 mJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

85.6nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Qualification Status :

Not Qualified

Packaging :

Tube

ECCN Code :

EAR99

Case Connection :

DRAIN

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

75A

Drain-source On Resistance-Max :

0.004ohm

Power Dissipation-Max :

300W Tc

Package / Case :

TO-220-3

Terminal Position :

Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

5082pF @ 25V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB