PHP101NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Pin Count :

3

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Avalanche Energy Rating (Eas) :

185 mJ

FET Type :

N-Channel

Number of Elements :

1

Published :

2009

Drain-source On Resistance-Max :

0.0075Ohm

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 5V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Number of Terminations :

3

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation-Max :

166W Tc

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Surface Mount :

No

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 25V

Drain Current-Max (Abs) (ID) :

75A