PHP101NQ04T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

75A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

200 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

36.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Pin Count :

3

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchMOS™

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.008Ohm

Power Dissipation-Max :

157W Tc

ECCN Code :

EAR99

Package / Case :

TO-220-3

Published :

2009

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Through Hole

Number of Terminations :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE